Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs
Identifieur interne : 019D02 ( Main/Repository ); précédent : 019D01; suivant : 019D03Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs
Auteurs : RBID : Pascal:97-0099670Descripteurs français
- Pascal (Inist)
- Indium phosphure, Gallium phosphure, Gallium arséniure, Gravure, Argon, Chlore, Hydrogène, Méthane, Plasma, Résonance cyclotronique électronique, Réaction chimique, Morphologie, Dépendance température, Domaine température 0273-0400 K, Domaine température 0400-1000 K, 8165C, 8105E, 8240R, Etude expérimentale.
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Abstract
Electron cyclotron resonance etching of InP, GaP, and GaAs in Ar, Ar/Cl 2, Ar/Cl2/H2, and Ar/Cl2/H2/CH4 plasmas is reported for substrate temperatures from 10 to 170 °C. Etch rates increased as a function of temperature for GaP and GaAs in an Ar/Cl2 plasma. With the addition of H2 or H2/CH4 to the plasma, the GaP and GaAs etch rates decreased and were essentially temperature independent. In comparison, InP etch rates showed a strong temperature dependence regardless of plasma chemistry. At 170 °C, InP etch rates were greater than GaP and GaAs in the Ar/Cl2/H2 and Ar/Cl2/H 2/CH4 plasmas. Atomic force microscopy was used to determine the root-mean-square roughness of the etched surfaces. The etched surface morphology for InP was strongly dependent on temperature and plasma chemistry while smooth pattern transfer was obtained for a wide range of plasma conditions for GaAs and GaP. © 1996 American Vacuum Society
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs</title><author><name sortKey="Shul, R J" uniqKey="Shul R">R. J. Shul</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Howard, A J" uniqKey="Howard A">A. J. Howard</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Vartuli, C B" uniqKey="Vartuli C">C. B. Vartuli</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Floride</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Florida, Gainesville</wicri:cityArea></affiliation></author><author><name sortKey="Barnes, P A" uniqKey="Barnes P">P. A. Barnes</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Physics, Auburn University, Auburn, Alabama 36849</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Alabama</region></placeName><wicri:cityArea>Department of Physics, Auburn University, Auburn</wicri:cityArea></affiliation></author><author><name sortKey="Seng, W" uniqKey="Seng W">W. Seng</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Physics, Auburn University, Auburn, Alabama 36849</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Alabama</region></placeName><wicri:cityArea>Department of Physics, Auburn University, Auburn</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0099670</idno><date when="1996-05">1996-05</date><idno type="stanalyst">PASCAL 97-0099670 AIP</idno><idno type="RBID">Pascal:97-0099670</idno><idno type="wicri:Area/Main/Corpus">018D62</idno><idno type="wicri:Area/Main/Repository">019D02</idno></publicationStmt><seriesStmt><idno type="ISSN">0734-2101</idno><title level="j" type="abbreviated">J. vac. sci. technol., A, Vac. surf. films</title><title level="j" type="main">Journal of vacuum science and technology. A. Vacuum, surfaces, and films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Argon</term><term>Chemical reactions</term><term>Chlorine</term><term>Electron cyclotron-resonance</term><term>Etching</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium phosphides</term><term>Hydrogen</term><term>Indium phosphides</term><term>Methane</term><term>Morphology</term><term>Plasma</term><term>Temperature dependence</term><term>Temperature range 0273-0400 K</term><term>Temperature range 0400-1000 K</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Indium phosphure</term><term>Gallium phosphure</term><term>Gallium arséniure</term><term>Gravure</term><term>Argon</term><term>Chlore</term><term>Hydrogène</term><term>Méthane</term><term>Plasma</term><term>Résonance cyclotronique électronique</term><term>Réaction chimique</term><term>Morphologie</term><term>Dépendance température</term><term>Domaine température 0273-0400 K</term><term>Domaine température 0400-1000 K</term><term>8165C</term><term>8105E</term><term>8240R</term><term>Etude expérimentale</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Chlore</term><term>Hydrogène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Electron cyclotron resonance etching of InP, GaP, and GaAs in Ar, Ar/Cl<sub> 2</sub>, Ar/Cl<sub>2</sub>/H<sub>2</sub>, and Ar/Cl<sub>2</sub>/H<sub>2</sub>/CH<sub>4</sub> plasmas is reported for substrate temperatures from 10 to 170 °C. Etch rates increased as a function of temperature for GaP and GaAs in an Ar/Cl<sub>2</sub> plasma. With the addition of H<sub>2</sub> or H<sub>2</sub>/CH<sub>4</sub> to the plasma, the GaP and GaAs etch rates decreased and were essentially temperature independent. In comparison, InP etch rates showed a strong temperature dependence regardless of plasma chemistry. At 170 °C, InP etch rates were greater than GaP and GaAs in the Ar/Cl<sub>2</sub>/H<sub>2</sub> and Ar/Cl<sub>2</sub>/H<sub> 2</sub>/CH<sub>4</sub> plasmas. Atomic force microscopy was used to determine the root-mean-square roughness of the etched surfaces. The etched surface morphology for InP was strongly dependent on temperature and plasma chemistry while smooth pattern transfer was obtained for a wide range of plasma conditions for GaAs and GaP. © 1996 American Vacuum Society</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0734-2101</s0></fA01><fA02 i1="01"><s0>JVTAD6</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., A, Vac. surf. films</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs</s1></fA08><fA11 i1="01" i2="1"><s1>SHUL (R. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>HOWARD (A. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>VARTULI (C. B.)</s1></fA11><fA11 i1="04" i2="1"><s1>BARNES (P. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>SENG (W.)</s1></fA11><fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611</s1><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Auburn University, Auburn, Alabama 36849</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1102-1106</s1></fA20><fA21><s1>1996-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 A</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0099670</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science and technology. A. Vacuum, surfaces, and films</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Electron cyclotron resonance etching of InP, GaP, and GaAs in Ar, Ar/Cl<sub> 2</sub>, Ar/Cl<sub>2</sub>/H<sub>2</sub>, and Ar/Cl<sub>2</sub>/H<sub>2</sub>/CH<sub>4</sub> plasmas is reported for substrate temperatures from 10 to 170 °C. Etch rates increased as a function of temperature for GaP and GaAs in an Ar/Cl<sub>2</sub> plasma. With the addition of H<sub>2</sub> or H<sub>2</sub>/CH<sub>4</sub> to the plasma, the GaP and GaAs etch rates decreased and were essentially temperature independent. In comparison, InP etch rates showed a strong temperature dependence regardless of plasma chemistry. At 170 °C, InP etch rates were greater than GaP and GaAs in the Ar/Cl<sub>2</sub>/H<sub>2</sub> and Ar/Cl<sub>2</sub>/H<sub> 2</sub>/CH<sub>4</sub> plasmas. Atomic force microscopy was used to determine the root-mean-square roughness of the etched surfaces. The etched surface morphology for InP was strongly dependent on temperature and plasma chemistry while smooth pattern transfer was obtained for a wide range of plasma conditions for GaAs and GaP. © 1996 American Vacuum Society</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A20</s0></fC02><fC02 i1="03" i2="X"><s0>001C01A02</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Gravure</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Etching</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Argon</s0><s2>NC</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Argon</s0><s2>NC</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Chlore</s0><s2>NC</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Chlorine</s0><s2>NC</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Hydrogène</s0><s2>NC</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Hydrogen</s0><s2>NC</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Méthane</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Methane</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Plasma</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Plasma</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Résonance cyclotronique électronique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electron cyclotron-resonance</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Réaction chimique</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Chemical reactions</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Morphologie</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Morphology</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Dépendance température</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Temperature dependence</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Domaine température 0273-0400 K</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Temperature range 0273-0400 K</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Domaine température 0400-1000 K</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Temperature range 0400-1000 K</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>8165C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="17" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="18" i2="3" l="FRE"><s0>8240R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fN21><s1>229</s1></fN21><fN47 i1="01" i2="1"><s0>9711M00626</s0></fN47></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>The 42nd national symposium of the American Vacuum Society</s1><s3>Mineapolis, Minnesota (USA)</s3><s4>1995-10-16/1995-10-20</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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